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Publications

[ 2000 ~ present ]

 

  1. "Mechanism-based design of precursors for MOCVD"  Lisa McElwee-White, Jurgen Koller, Dojun Kim, and Tim Anderson.  ECS Trans 25(8) 161-171(2009). 

  2. "Deposition of WNxCy from the Tungsten Piperidylhydrazido complex Cl4(CH3CN)W(N-pip) as a Single-Source Precursor"  Dojun Kim, Oh Hyun Kim, Hiral Ajmera, Tim Anderson, Jurgen Koller, Lisa McElwee-White.  ECS Trans 25(8) 541-548(2009)

  3. "Investigation of the thermal decomposition of TEGa using in situ Raman Spectroscopy and DFT calculations" Jooyoung Lee, Young Seok Kim, and Tim Anderson.  ECS Trans 25 (8) 41-49 (2009).  

  4. "Chemical Vapor Deposition of WNxCy using the tungsten piperidylhydrazido complex Cl4(CH3CN)W(N-pip): Deposition, characterization, and diffusion barrier evaluation."  DJ. Kim, O.H. Kim, T. Anderson, J. Koller, L. McElwee-White, L.C. Leu, J.M. Tsai, and D.P. Norton. J. Vac. Sci. Technol. A 27(4) 2009.

  5. "Atomic Layer Deposition of GaN using GaCl3 and NH3." Oh Hyun Kim, Dojun Kim, and Tim Anderson.  J. Vac. Sci. Technol. 27(4) 2009.

  6. "MOCVD of YSZ Coatings Using β-diketonate precursors," V. G. Varanasi, T. M. Besmann, R.L. Hyde, E. A. Payzant, T. J. Anderson.  Journal of Alloys and Compounds 470 (2009)  354-359. 

  7. "Deposition of WNxCy thin films for diffusion barrier application using the dimethylhydrizido (2-) tungsten  complex (CH3CN(Cl4W(NNMe2) H.M. Ajmera, T.J. Anderson, J. Koller, L. McElwee-White, D.P. Norton Thin Solid Films (2009)

  8. "Computational Study of the Gas Phase Reactions of Isopropylimido and Allylimido Tungsten Precursors for Chemical Vapor Deposition of Tungsten Carbonitride Films: Implications for the Choice of Carrier Gas."  Y.S. Won, Y.S. Kim, T.J. Anderson, and L. McElwee-White, Chem. Mater. 20(23) (2008) 7246-7251. 

  9. "Reaction kinetics of CuGaSe2 formation from a GaSe/CuSe bilayer precursor film", W.K. Kim, E.A. Payzant, S. Kim, S.A. Speakman, O.D. Crisalle, T.J. Anderson, J. Crystal Growth. 310(2008)2987-2994.

  10. "Deposition of WNxCy Using the Allylimido Complexes Cl4(RCN)W(NC3H5): Effect of NH3 on Film Properties", HM Ajmera, AT Heitsch, OJ Bchir, DP Norton, LL, Reitfort, L McElwee-White, and TJ Anderson, J. Electrochem. Soc. 155(10) H829-H835 (2008).

  11. "Thermodynamic Optimization of the Ga-Se System" F Zheng, JY Shen, YQ Liu, WK Kim, MY Chu, M Ider, XH Bao, and TJ Anderson, Computer Coupling of Phase Diagrams amd Thermochemistry" 32, 432-438 (2008).

  12. "Thermodynamic analysis and growth of ZrO2 by chloride chemical vapor deposition" V.G. Varanasi, T.M. Besmann, E.A. Payzant, T.L. Starr, T.J. Anderson, Thin Solid Film, 516 (2008) 6133

  13. "Synthesis and characterization of diorganohydrazido(2-) tungsten complexes", Jurgen Koller, Hiral M. Ajmera, Khalil A. Abboud, Tim Anderson, Lisa McElwee-White", Inorg. Chem., 47 (2008) p4457

  14. "Growth mechanism of catalyst- and template-free Group III-nitride nanorods", Yong Sun Won, Young Seok Kim, Olga Kryliouk and Tim Anderson,  J. Cryst. Growth, 310 (2008) 3735 

  15. "Growth mechanism of catalyst- and template-free InN nanorods", Yong Sun Won, Young Seok Kim, Olga Kryliouk and Tim Anderson,  Physica Status Solidi c, 5(6), p1633 (2008)

  16. "Homogeneous decomposition mechanisms of diethylzinc by Raman spectroscopy and quantum chemical calculations", Young Seok Kim, Yong Sun Won, Helena Hagelin-Weaver, Nicoló Omenetto and Tim Anderson, J. Phys. Chem. A, 112, p4246 (2008) 

  17. "Prevention of In droplets formation by HCl addition during metal organic vapor phase epitaxy of InN", Sang Won Kang, Hyun Jong Park, Yong Sun Won, Olga Kryliouk,  Tim Anderson, Dmitry Khokhlov  and Timur Burbaev, Appl. Phys. Lett., 90, 161126  (2007) 

  18. "Controlled synthesis of single-crystalline InN nanorods", Olga Kryliouk, Hyun Jong Park, Yong SunWon, Tim Anderson, Albert Davydov, Igor Levin, Ji Hyun Kim and Jaime A Freitas Jr, Nanotechnology 18 (2007) 135606  

  19. "Equilibrium analysis of zirconium carbide CVD growth", Yong Sun Won, Venu G. Varanasi, Olga Kryliouk, Timothy J. Andersona, Lisa McElwee-White, Rosa J. Perez, J. Cryst. Growth,  307 (2007) 302–308

  20. "Growth of ZrC thin films by aerosol-assisted MOCVD", Yong Sun Won, Young Seok Kim, Venu G. Varanasi, Olga Kryliouk, Timothy J. Anderson, Chatu T. Sirimanne, Lisa McElwee-White, J. Cryst. Growth,  304 (2007) 324–332 

  21. "In situ investigation of the selenization kinetics of Cu–Ga precursors using time-resolved high-temperature X-ray diffraction", W.K. Kim, E.A. Payzant, T.J. Anderson and O.D. Crisalle, Thin Solid Films 515, pp5837-5842 (2007). 

  22. "Properties of Ta–Ge–(O)N as a diffusion barrier for Cu on Si", S. Rawal and D.P. Norton, H. Ajmera, T.J. Anderson and L. McElwee-White, Appl. Phys. Lett., 90, 051913 (2007). 

  23. "Homogeneous Decomposition of Aryl- and Alkylimido Precursors for the Chemical Vapor Deposition of Tungsten Nitride: A Combined Density Functional Theory and Experimental Study", Y.S. Won, Y.S. Kim, T.J. Anderson, L.L. Reitfort, I. Ghiviriga and L. McElwee-White, J. Am. Chem. Soc., 128, p13781 (2006). 

  24. "Thermodynamic description of the ternary compounds in the Cu-In-Se system", J. Shen, W.K. Kim, S. Shang, M. Chu, S. Cao and T.J. Anderson, Rare Metals, 25(5), p481 (2006).

  25. “Comparative study of HfNx and Hf-Ge-N copper diffusion barriers on Ge", S. Rawal, E. Lambers, D.P. Norton, T.J. Anderson and L. McElwee-White, J. Appl. Phys., 100, 063532 (2006). 

  26. “In-situ investigation on selenization kinetics of Cu-In precursor using time-resolved, high temperature x-ray diffraction.”, W.K. Kim, E.A. Payzant, S. Yoon and T.J. Anderson, J. Cryst. Growth 294, p231-235 (2006) .

  27. “Investigation of Rapid Thermal Annealing on Cu(In,Ga)Se2 Films and Solar Cells”, X. Wang, S.S. Li, W.K. Kim, S. Yoon, V. Craciun, J.M. Howard, S. Easwaran, O. Manasreh, O.D. Crisalle and T.J. Anderson, Solar Energy Materials and Solar Cells, 90, p2855 (2006).

  28. "Oxynitride mediated epitaxy of gallium nitride on silicon(1 1 1) substrates in a merged hydride/metal-organic vapor phase epitaxy system", M. Mastro, O. Kryliouk and T. Anderson, Mat. Sci. Eng. B, 127, p91-97 (2006).  

  29. "A Numerical Study of Flow and Thermal Fields in Tilted Rayleigh–Bénard Convection.", D. Crunkleton,  and T. J. Anderson, Int. Commun. Heat.  Mass., 33, p24-29 (2006). 

  30. "Comparison of Device Performance and Measured Transport Parameters in Widely-varying Cu(In,Ga) (Se,S) Solar Cells.", I. L. Repins, B. J. Stanbery, D. L. Young, S. S. Li, W. K. Metzger, C. L. Perkins, W. N. Shafarman, M. E. Beck, L. Chen, V. K. Kapur, D. Tarrant, M. D. Gonzalez, D. G. Jensen, T. J. Anderson, X. Wang, L. L. Kerr, B. Keyes, S. Asher, A. Delahoy, and B. Von Roedern, Prog. Photovoltaics: Res. Appl., 14(1), p25-43 (2006).  

  31. "Numerical Simulations of Periodic Flow Oscillations in Low Prandtl Number Fluids", D. Crunkleton, R. Narayanan, and T. J. Anderson, Int. J. Heat. Mass. Tran., 49(1-2), p427-438 (2006). 

  32. "Improved Oxide Passivation of AlGaN/GaN High Electron Mobility Transistors", B. P. Gila, M. Hlad, A. H. Onstine, R. Frazier, G. T. Thaler, A. Herrero, E. Lambers, C. R. Abernathy, and S. J. Pearton,  Appl. Phys. Lett., 87, 163503 (2005). 

  33. "Properties of W–Ge–N as a diffusion barrier material for Cu", S. Rawal, D.P. Norton, T.J. Anderson, and L. McElwee-White, Appl. Phys. Lett., 87, 111902 (2005). 

  34. “Numerical Procedure to Extract Physical Properties from Raman Scattering Data in a Flow Reactor,” J. Y. Hwang, C. Park, M. Huang, and T. Anderson, J. Electrochem. Soc., 152(5), C334-C339 (2005). 

  35. “Reaction Kinetics of α-CuInSe2 Formation from an In2Se3/CuSe Bilayer Precursor Film”, W.K. Kim, S. Kim, E.A. Payzant, S.A. Speakman, S. Yoon, R.M. Kaczynski, R.D. Acher, T.J. Anderson, O.D. Crisalle, S.S. Li and V. Craciun, J. Phys. Chem. Solids.  66(11), p.1915 (2005).  

  36. "Effect of a Cu-Se Secondary Phase on the Epitaxial Growth of CuInSe2 on (100) GaAs", S. Yoon, S. Kim, V. Craciun, W.K. Kim, R. Kaczynski, R. Acher, T.J. Anderson, O.D. Crisalle and S.S. Li, J. Crystal Growth, 281(2-4), pp. 209 - 219 (2005). 

  37. "Pt-coated InN Nanorods for Selective Detection of Hydrogen at Room Temperature", O. Kryliouk, H. J. Park, H. T. Wang, B. S. Kang, T. J. Anderson, F. Ren and S. J. Pearton, J. Vac. Sci. Technol. B, 23(5), pp.1891-1894 (2005).  

  38. "Tungsten Allylimido Complexes Cl4(RCN)W(NC3H5) as Single-Source CVD Precursors for WNxCy Thin Films. Correlation of Precursor Fragmentation to Film Properties", O. J. Bchir, K. M. Green, H. M. Ajmera, E. A. Zapp, T. J. Anderson, B. C. Brooks, L. L. Reitfort, D. H. Powell, K. A. Abboud, and L. McElwee-White, J. Am. Chem. Soc., 127, pp.7825-7833 (2005). 

  39. "Identification of a Gallium-Containing Carbon Deposit Produced by Decomposition of Trimethyl Gallium", C. Park,  J. Kim, D. Yoon,S. Han, C. Doh, S. Yeo, K. Lee, and T. J. Anderson, J. Electrochem. Soc., 152(5), C298 (2005). 

  40. "Epitaxial Strain Energy Measurements of GaN on Sapphire by Raman Spectroscopy", H.J. Park, C. Park, S. Yeo, M. Mastro, O. Kryliouk, T. Anderson, Physica Status Solidi, 2(7), pp.2446-2449  (2005). 

  41. "The Influence of Interdiffusion on Strain energy in the GaN-Sapphire System", S.W. Kang, H.J. Park, T. Kim, T. Dann, O. Kryliouk, T. Anderson, Physica Status Solidi, 2(7), pp.2420-2423 (2005) 

  42. “Reaction Kinetics of CuInSe2 Thin Films Grown from Bilayer InSe/CuSe Precursors”, S. Kim, W.K. Kim, E.A. Payzant, R.M. Kaczynski, R.D. Acher, S. Yoon, T.J. Anderson, O.D. Crisalle, and S.S. Li, , J. Vac. Sci. Technol. A, 23(2), pp.310-315 (2005).  

  43. "Influence of Polarity on GaN Thermal Stability", M. Mastro, O. Kryliouk, T. Anderson, A. Davydov, A. Shapiro, J. Crystal Growth, 274, pp. 38 - 46 (2005) 

  44. "Growth and Characterization of Single-crystalline Gallium Nitride Using (100) LiAlO2 Substrates", M. D. Reed, O. M. Kryliouk, M. A. Mastro, and T. J. Anderson, J. Crystal Growth, 274, pp. 14 - 20 (2005). 

  45. "Equilibrium Analysis of CVD of Yttria-Stabilized Zirconia", V. G. Varanasi, T. M. Besmann, and T. J. Anderson, J. Electrochem. Soc., 152(1), C7-C14 (2005). 

  46. “Investigation of Pulsed Non-Melt Laser Annealing on the Film Properties and Performance of Cu(In,Ga)Se2 Solar Cells”, X. Wang, S.S. Li, C.H. Huang, S. Rawal, J.M. Howard, V. Craciun, T. J. Anderson, and O. D. Crisalle, Solar Energy Materials and Solar Cells, 88, pp.65-73 (2005).  

  47. "Effect of NH3 on Film Properties of MOCVD Tungsten Nitride from Cl4(CH3CN)W(NiPr)", O.J. Bchir, K. Kim, T.J. Anderson, V. Craciun, B.C. Brooks, and L. McElwee-White, J. Electrochem. Soc., 151(10), G697 (2004). 

  48. “Investigation of Deep-Level Defects in Cu(In,Ga)Se2 Solar Cells by Deep-Level Transient Spectroscopy,” L.L. Kerr, S.S. Li, S.W. Johnston, T.J. Anderson, O.D. Crisalle, W.K. Kim, J. Abushama, and R.N. Noufi, Solid State Electronics, 48, pp.1579-1586 (2004). 

  49. “Investigation of Mass Transport Phenomena in an Upflow Cold-Wall CVD Reactor by Gas Phase Raman Spectroscopy and Modeling”, J.Y. Hwang, C. Park, M. Huang and T.J. Anderson, J. Cryst. Growth, 279, pp.521-530 (2004). 

  50. "Numerical Simulations of Periodic Flow Oscillations in Low Prandtl Number Fluids,” D. Crunkleton, R. Narayanan, and T.J. Anderson. Accepted Int. J. Heat & Mass Transfer (2004).

  51.  “Local Structure of CuIn3Se5 X-ray Absorption Fine Structure Study and First Principles Calculations,” C.-H. Chang, S.H. Wei, J.W. Johnson, S.B. Zhang, N. Legarovski, G. Bunker and T.J. Anderson, Phys. Rev. B, 68, 054108 ( 2003).

  52. “Device Modeling and Simulation of the Performance of Cu(In1-xGax)Se Solar Cells,” J.Y. Song, S.S. Li, C.H. Huang, O.D. Crisalle, and T.J. Anderson, Solid-State Electronics, 48(1), 73-79 (2004).

  53. “Application of the Point-Defect Analysis Technique to Zinc Doping of MOCVD Indium Phosphide,” A.J. Howard, B. Pathangey, Y. Hayakawa, T.J. Anderson, C. Blaauw and A.J. SpringThorpe, Semi. Sci. Tech., 18(8), 723-728 (2003). 

  54. “Transparent and Conducting Indium Tin Oxide Thin Films Grown by Pulsed Laser Deposition at Low Temperatures; V. Craciun, D. Craciun, W. Xuege, T.J. Anderson, R.K. Singh, J. Opto. & Adv. Mat., 5(2), 401-408 (2003).

  55. “Cl4(PhCN)W(NPh) as a Single-Source MOCVD Precursor for Deposition of Tungsten Nitride (WNx) Thin Films,” O.J. Bchir, K.M. Green, M.S. Hlad, T.J. Anderson, B.C. Brooks, C.B. Wilder, D.H. Powell, and L. McElwee-White. J. Organometallic Chem., 684, 338-350 (2003). 

  56. “MOCVD of Tungsten Nitride (WNx) Thin Films from the Imido Complex Cl4(CH3CN)W(NiPr),” O.J. Bchir, S.W. Johnston, A.C. Cuadra, T.J. Anderson, C.G. Ortiz, B.C. Brooks, D.H. Powell and L. McElwee-White. J. Crystal Growth, 249(1-2), 262-274 (2003). 

  57. “Investigation of an Upflow Cold-Wall CVD Reactor by Gas Phase Raman Spectroscopy,” C. Park, J.Y. Hwang, M. Huang, and T.J. Anderson. Thin Solid Films, 409(1), 88-97 (2002). 

  58. “Calculated Strain Energy of Hexagonal Epitaxial Thin Films,” J. Shen, S. Johnston, S. Shang, and T. Anderson. J. Crystal Growth, 240, 6-13 (2002). 

  59. “Epitaxial Growth and Characterization of CuInSe2 Crystallographic Polytypes,” B.J. Stanbery, S. Kincal, S. Kim, C.-H. Chang, S.P. Ahrenkiel, G. Lippold, H. Neumann, T.J. Anderson and O.D. Crisalle. J. Appl. Phys., 91(6), 3598-3604 (2002). 

  60. “High-Power GaN Electronic Devices,” A.P. Zhang, F. Ren, T.J. Anderson, C.R. Abernathy, R.K. Singh, P.H. Holloway, S.J. Pearton and D. Palmer. Critical Rev. Solid State & Mat. Sci., 27(1), 1-71 (2002).

  61. “High Breakdown M-I-M Structures on Bulk AlN,” B. Luo, J.W. Johnson, O. Kryliouk, F. Ren, S.J. Pearton, S.N.G. Chu, A.E. Nikolaev, Y.V. Melnik, V.A. Dmitriev and T.J. Anderson. Solid-State Electr., 46(4), 573-576 (2002). 

  62. “In situ Raman Spectroscopic Studies of Trimethylindium Pyrolysis in an OMVPE Reactor,” C. Park, W.S. Jung, Z.S. Huang and T.J. Anderson. J. Mater. Chem., 12(2), 356-360 (2002). 

  63. “Thermodynamic Assessment of the Gallium-Nitrogen System,” A.V. Davydov, W.J. Boettinger, U.R. Kattner and T.J. Anderson. phys. stat. Sol. (a), 188(1), 407-410 (2001). 

  64. “Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2,” M.A. Mastro, O.M. Kryliouk, M.D. Reed, T.J. Anderson, A. Davydov, and A. Shapiro. phys. stat. sol. (a), 188(1), 467-471 (2001). 

  65. "Diffusion of Single Quantum Well Si1-xGex/Si Layers under Vacancy Supersaturation,” M. Griglione, T.J. Anderson, M.E. Law, K.S. Jones, A. van den Bogaard, and M. Puga-Lambers. J. Appl. Phys., 89(5), 2904-2906 (2001).

  66. “Wet Chemical Etching of LiGaO2 and LiAlO2,” C.H. Hsu, K.P. Ip, J.W. Johnson, S.N.G. Chu, O. Kryliouk, S.J. Pearton, L., B.H.T. Chai, T.J. Anderson and F. Ren. J. Electrochem. Soc. ST, 4 (6), C35-C38 (2001).

  67. “Study of Cd-free Buffer Layers Using Inx(OH,S)y on CIGS Solar Cells,” C.H. Huang, Sheng S. Li, W.N. Shafarman, C.H. Chang, E.S. Lambers, L. Rieth, J.W. Johnson, S. Kim, B.J. Stanbery, T.J. Anderson and P.H. Holloway. J. Solar Energy Mat. & Solar Cells, 69(2), 131-137 (2001).  

  68. "Near-Net Shape Fabrication by Forced-Flow, Thermal-Gradient CVI," T.M. Besmann, D.P. Stinton, R.A. Lowden, K.J. Probst and T.J. Anderson, Industrial Ceramics 20 (2), 112-115 (2000).

  69. “Long and Short Range Ordering of CuInSe2,“ C.-H. Chang, S.H. Wei, J.W. Johnson, R.N. Bhattacharya, B.J. Stanbery, T.J. Anderson, R. Duran. Jpn. J. App. Phys. 39, 411-412 (2000).

  70. “Diffusion of Ge in Si(1-x)Ge(x)/Si Single Quantum Wells in Inert and Oxidizing Ambients,” M. Griglione, T.J. Anderson, Y.M. Haddara, M.E. Law, KS. Jones, and A. van de Bogaard. J. Appl. Phys., 88(3), 1366-1372 (2000).

  71. “Applications of Computational Thermodynamics: Groups 4 and 5: Use of Thermodynamic Software in Process Modelling and New Applications of Thermodynamic Calculations,” U.R. Katner, G. Eriksson, I. Hahn, R. Schmid-Fetzer, B. Sunman, V. Swamy, A. Kussmaul, P.J. Spencer, T.J. Anderson, T.G. Chart, A. Costa-Silva, B. Jansson, B.J. Lee and M. Schalin, CALPHAD, 24(1), 55-94 (2000).

  72. “Composition Effects on the Local Structure of CuInSe2: X-ray Absorption Fine Structure Investigations and First-Principles Calculations”,  C.H. Chang, J.W. Johnson, B.J. Stanbery, T.J. Anderson, S.H. Wei, G. Bunker, and R. Duran, Journal of Applied Physics, (2000).

[ 1990 ~ 1999 ]

  1. “A Numerical Model that Shows the Effect of Gravity Driven Convection on Measurements of Mass Diffusivity,” C. Mallika, A.X. Zhao, R. Narayanan and T.J. Anderson, Gravitational Effects in Materials and Fluid Sciences Adv. Space Res., 24(10), 1303-1310 (1999).

  2. “Development of a Scaled-Up Chemical Vapor Infiltration System for Tubular Geometries,” K.J. Probst, T.M. Besmann, J.C. McLaughlin, T.J. Anderson and T.L. Starr, Mat. High Temp., 16(4), 201-205 (1999).

  3. “Recent Advances in Forced-Flow, Thermal-Gradient CVI for Refractory Composites,” K.J. Probst, T.M. Bermann, D.P. Stinto, R.A. Lowden, T.J. Anderson and T.L. Starr, Surface and Coating Tech., 120-121, 250-258 (1999).

  4. “GaN Substrates: Growth and Characterization,” O. Kryliouk, M. Reed, M. Mastro, T. Anderson and B. Chai, Phys. Stat. Sol. (a), 176, 407-410 (1999).

  5. "Thermodynamic Analysis of the Ga-N System," A.V. Davydov and T.J. Anderson. In III-V Nitride Materials and Processes III, Ed. T.D. Moustakas et al., Elect. Soc. Proc., 98-18, 38-49 (1999).

  6. "Large Area GaN Substrates," O. Kryliouk, M. Reed, T. Dann, T. Anderson and B. Chai, Mat. Sci. Eng. B, 66 (1-3), 26-29 (1999).

  7. “A Novel Process for Flourine Production in a Proton Exchange Membrane Reactor,” R. Lowrey, M. Doyle and T.J. Anderson, Electrochem. & Solid State Lett. 2(10), 519-521 (1999). 

  8. "Growth of GaN Single Crystal Substrates," O. Kryliouk, M. Reed, T. Dann, T. Anderson and B. Chai, Mat. Sci. Eng. B, 59, 6-11 (1999).

  9. "An Electrochemical Method to Detect Flow Profiles During Convection in Liquid Metals," S.R. Prasad, C. Mallika, T.J. Anderson and R. Narayanan, J. Crystal Growth, 198/199, 194-200 (1999).

  10. "Study of NH3 Plasma Damage on GaAs Schottky Diodes in Inductively Coupled Plasma System," L.C. Meyer, J.W. Lee, D. Johnson, M. Huang, F. Ren, T.J. Anderson, J.R. LaRoche, J.R. Lothian, C.R. Abernathy and S.J. Pearton, J. Electrochem. Soc., 146(7), 2717-19 (1999). 

  11. "Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T-Gate Passivation," F. Ren, J. LaRoche, T. Anderson, S.J. Pearton, J.W. Lee, D. Johnson, J.R. Lothian, J. Lin, J.S. Weiner, R.J. Shul and C.S. Wu, Electrochemical and Solid-State Lett., 1, 279-281 (1998).

  12. "Comparison of Plasma Chemistries for Dry Etching Thin Film Electroluminescent Display Materials," J.W. Lee, B. Pathangey, M.R. Davidson, P.H. Holloway, E.S. Lambers, A. Davydov, T.J. Anderson and S.J. Pearton, J. Vac. Sci. Tech. A, 16(4), 2177-2186 (1998).

  13. "Electron Cyclotron Resonance Plasma Etching of Oxides and SrS and ZnS-based Electroluminescent Materials for Flat Panel Displays," J.W. Lee, B. Pathangey, M.R. Davidson, P.H. Holloway, E.S. Lambers, A. Davydov, T.J. Anderson, and S.J. Pearton, J. Vac. Sci. Tech. A, 16, 1944-1948 (1998).

  14. “F Induced Layer Disordering of GaAs/InGaP Quantum Wells,” U. Das, B. Pathangey, Z. Osman and T.J. Anderson, Appl. Phys. Lett., 71(12), 1700-1702 (1997).

  15. "Solution Thermodynamics of Electronic Materials," T. Anderson, D. de Fontaine, S.G. Fries, B. Legendre, W.A. Oates, R. Schmid-Fetzer, H.J. Seifert and Q. Chen, CALPHAD, 21, 266-285 (1997).

  16. “Solid Precursor MOCVD of Heteroepitaxial Rutile Phase TiO2,” D.R. Burgess, P.A. Morris-Hotsenpiller, T.J. Anderson and J.L. Hohman. J. Crystal Growth, 166(1-4), 763-768 (1996).

  17. "Oxygen-based Deep Levels in Metalorganic Vapor-Phase Epitaxy Indium Gallium Arsenide," J.W. Huang, T.F. Kuech and T.J. Anderson, Appl. Phys. Lett. 67(8), 1116-1118 (1995).

  18. “The Calculation of Liquid-Vapor Equilibrium for Group IA and Group IIA Metals,” M.M. Montoya, T.J. Anderson and K. Runge. Phys. Chem. Liquids 29 (3): 169-181 (1995).

  19. “Determination of the Sb Activity in Sb-Te Melts by Solid State EMF Measurements,” Y. Feutelais, B. Legendre, S. Misra and T.J. Anderson, J. Phase Equilibria, 15, 171-177 (1994).

  20. “A Binary Database for III-V Compound Semiconductor Systems,” I. Ansara, C. Chatillon, L. Lukas, T. Nishizawa, H. Ohtani, K. Ishida, M. Hillert, B. Sundman, B.B. Argent, A. Watson, T.G. Chart and T.J. Anderson, CALPHAD, 18, 177-222 (1994).

  21. "Photopumped Lasing for Evaluating the Potential of New Materials for Use in Light-Emitting Devices," Y. Guan, P. Zory, B. Pathangey and T.J. Anderson, Photonics and Optoelectronics, 1, 141-148 (1993).

  22. “MOCVD Growth of Non-Epitaxial and Epitaxial ZnS Thin Films,” J. Fang, P.H. Holloway, J.E. Yu, K.S. Jones, B. Pathangey, E. Bretschneider and T.J. Anderson, Appl. Surf. Sci., 70/71, 701-706 (1993).

  23. "Laser Raman Spectroscopic Studies of Gas Phase Trimethylindium, Triethylindium and Ethyl-dimethylindium," Z.S. Huang, C.H. Park and T.J. Anderson, J. Organomet. Chem., 449, 77 (1993).

  24. "Raman Scattering in Single-Crystal GdBa2Cu3O7-x," V. Zelezny, D.B. Tanner, C. Park, T.J. Anderson, L.P. Kozeeva and A.A. Pavlyuk., phys. stat. sol. (b), 171, K37-42 (1993).

  25. "The Detection of Solutal Convection During Electrochemical Measurement of the Oxygen Diffusivity in Liquid Tin," B. Sears, T.J. Anderson, R. Narayanan and A.L. Fripp, Met. Trans. B, 24, 91-100 (1993).

  26. "An Electrochemical Method for Detecting Flow Regimes of Convection in Tin," B. Sears, R. Narayanan, T.J. Anderson, A.L. Fripp, W.J. Debnam and G.A. Woodell, J. Crystal Growth, 125, 415-419 (1992).

  27. "Convection of Tin in a Bridgman System: Flow Characterization by Effective Diffusivity Measurements," B. Sears, R. Narayanan, T.J. Anderson and A.L. Fripp, J. Crystal Growth, 125, 404-414 (1992).

  28. “The Measurement of Deep Level States Caused By Misfit Dislocations in InGaAs/GaAs Grown on Patterned GaAs Substrates,” G.P. Watson, D.G. Ast, T.J. Anderson, B. Pathangey and Y. Hayakawa, J. Appl. Phys., 71, 3399-3407 (1992).

  29. "Characterization of ZnS Layers Grown by MOCVD for Thin Film Electroluminescence (TFEL) Devices," J.E. Yu, K.S. Jones, J. Fan, P.H. Holloway, B. Pathangey, E. Bretschneider and T.J. Anderson, in "Wide Bandgap Semiconductors," T.D. Moustakas, J.I. Pankove and Y. Hamakawa, eds., MRS Publ., Vol. 242 (1992).

  30. “OMVPE Growth of ZnSe Utilizing Zinc Amides as Source Compounds: Relevance to the Production of p-type Material,” W.S. Rees, D.M. Green, T.J. Anderson and E. Bretschneider, in "Wide Bandgap Semiconductors," T.D. Moustakas, J.I. Pankove and Y. Hamakawa, eds., MRS Publ., Vol. 242 (1992).

  31. “Evaluation of Zn {N[Si(CH3)3]2}2 as a p-type Dopant in OMVPE Growth of ZnSe,” W.S. Rees, D.M. Green, T.J. Anderson, E. Bretschneider, B. Pathangey, C. Park and J. Kim, J. Electron. Mat., 21, 361-366 (1992).

  32. “Process Characterization and Evaluation of Hydride VPE Grown InGaAs using a Ga/In Alloy Source,” C. Park, V.S. Ban, G.H. Olsen, T.J. Anderson and K.P. Quinlan, J. Elect. Mat., 21, 448-54 (1992).

  33. “An Assessment of the Phase Diagram and Thermochemistry of the Ga-Sn System,” T.J. Anderson and I. Ansara, J. Phase Equil., 13, 181-189 (1992).

  34. “The Thermal Stability of Lattice Mismatched InGaAs Grown on Patterned GaAs,” P. Watson, D.G. Ast, T.J. Anderson, Y. Hayakawa and B. Pathangey, J. Electron. Mat., 20, 703-708 (1991).

  35. “O Implantation in ZnSe: Lattice Distortion by Raman Measurement,” A. Deneuville, C.H. Park, P. Ayyub, T. Anderson, P. Lowen, K. Jones and P.H. Holloway, Appl. Surf. Sci., 50, 308-311 (1991).

  36. “CVD of TiCx on Single Crystal Al2O3,” R.A. Aparicio, E.F. Allen, T.J. Anderson and M.D. Sacks, Cer. Trans., "Advanced Composite Materials," M.D. Sacks, ed., Am. Cer. Soc., 145-152 (1991).

  37. “Influence of Trench Depth on the Misfit Dislocation Density at Strained Epitaxial Layer Interfaces Grown on Patterned GaAs Substrates,” G.P. Watson, D.G. Ast, T.J. Anderson and Y. Hayakawa, Appl. Phys. Lett., 58, 2517-2519 (1991).

  38. “An Assessment of the Phase Diagram and Thermochemistry of the Ga-In System,” T.J. Anderson and I. Ansara, J. Phase Equil., 12, 64-72 (1991).

  39. “Schottky Barrier Height Enhancement of n-In0.53Ga0.47As by a Novel Chemical Passivation Technique,” K.C. Hwang, S.S. Li, C. Park and T.J. Anderson, J. Appl. Phys., 67, 6571-6573 (1990).

  40. “Assessment of the Al-Sb System,” C.A. Coughanowr, U.R. Kattner and T.J. Anderson, CALPHAD, 14, 193-202 (1990).

  41. “A Thermodynamic Analysis of Germanium Nitride CVD,” F. Defoort, J.L. Ponthenier and T.J. Anderson, High Temp. Sci., 27, 143-158 (1990)

[ 1977  ~ 1989 ]

  1. “Chemical Vapor Deposition of TiCx on Al203 Substrates,” R. Aparicio, J.L. Ponthenier, F. Hong, T.J. Anderson, M.D. Sacks and G. Johnson, Ceram. Eng. Sci. Proc., 10, 1462-1471 (1989).

  2. “Electrically Active Multilayer n-GaAs/p-AlGaAs Quarter Wave Mirrors Grown by Molecular Beam Epitaxy,” A.J. Howard, T.J. Anderson, S. Larochelle, I.C. Bassignana, P. Mandeville and M.N. Svilans, Can. J. Phys., 67, 232-237 (1989).

  3. “Influence of Ag+-Na+ Ion-Exchange Equilibrium on Waveguide Index Profiles,” R.V. Ramaswamy, R. Srivastava, P. Chludzinski and T.J. Anderson, J. Quantum Electron., 24, 780-786 (1988).

  4. “Calorimetric and Knudsen Effusive Studies of the Thermo-Chemical Properties of GaxInl-xP Alloys,” T.J. Anderson, C. Colinet, M. Tmar and C. Chatillon, J. Crystal Growth, 83, 252-260 (1987).

  5. “An Investigation of the Reaction of HCl with Ga and In,” J.J. Hsieh and T.J. Anderson, J. Crystal Growth, 83, 268-278 (1987).

  6. “Ion-Exchange of Silver in Soda-Lime Silicate Glass,” P. Chludzinski, R.V. Ramaswamy and T.J. Anderson, J. Phys. Chem. Glasses, 28, 169-173 (1987).

  7. “An ESD Study of the Interaction of Hydrogen, Deuterium and Oxygen with GaAs(1OO),” C.F. Corallo, D.A. Asbury, M.A. Pipkin, T.J. Anderson and G.B. Hoflund, Thin Solid Films, 139, 299-310 (1986).

  8. “Chemical Vapor Deposition of Electronic Materials,” D.W. Hess, K.F. Jensen and T.J. Anderson, Reviews Chem. Eng., 3, 97-186 (1985).

  9. “A Mechanism and Kinetics of Si Growth,” E.C. Stassinos, T.J. Anderson and H.H. Lee, J. Crystal Growth., 73, 21-30 (1985).

  10. “Solid-State Electrochemical Study of the Pseudobinary Ga-In-Sb Liquid Alloy,” K.M. Chang, C.A. Coughanowr and T.J. Anderson, Chem. Eng. Comm., 38, 275-297 (1985).

  11. “Thermodynamics of the Gallium-Indium-Antimony System,” T.L. Aselage and T.J. Anderson, High Temp. Sci., 20, 207-230 (1985).

  12. “Coupling of the Phase Diagram and Thermochemistry in the Ga-Sb and InSb Systems,” T.L. Aselage, K.M. Chang and T.J. Anderson, CALPHAD, 9(3), 227-256 (1985).

  13. “Solid-State Electrochemical Study of Indium-Antimony Liquid Alloys,” T.J. Anderson and L.F. Donaghey, J. Electrochem. Soc., 131, 3006-3014 (1984).

  14. “Solid-State Electrochemical Study of Gallium-Antimony Liquid Alloys,” T.J. Anderson and L.F. Donaghey, J. Chem. Thermodynamics, 15, 927-940 (1983).

  15. “Solid-State Electrochemical Study of the Standard Gibbs Energy of Formation of Indium Sesquioxide,” T.J. Anderson and L.F. Donaghey, J. Chem. Thermodynamics, 9, 617-628 (1977).

  16. “Solid-State Electrochemical Study of the Standard Gibbs Energy of Formation of Gallium Sesquioxide Using a Calcia-Stabilized Zirconia Electrolyte,” T.J. Anderson and L.F. Donaghey, J. Chem. Thermodynamics, 9, 603-615 (1977).
     

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